1n4448 document number 81858 rev. 1.1, 17-aug-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diodes features ? silicon epitaxial planar diodes ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? extreme fast switches mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code type marking remarks 1n4448 1N4448-TAP or 1n4448-tr v4448 ammopack/tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 100 v reverse voltage v r 75 v peak forward surge current t p = 1 s i fsm 2a repetitive peak forward current i frm 500 ma forward continuous current i f 300 ma average forward current v r = 0 i fav 150 ma power dissipation l = 4 mm, t l = 45 c p tot 440 mw l = 4 mm, t l 25 c p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 150 c
www.vishay.com 2 document number 81858 rev. 1.1, 17-aug-10 1n4448 vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min. ty p. max. unit forward voltage i f = 5 ma v f 620 720 mv i f = 100 ma v f 1000 mv reverse current v r = 20 v i r 25 na v r = 20 v, t j = 150 c i r 50 a v r = 75 v i r 5a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) 100 v diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 4pf rectification efficiency v hf = 2 v, f = 100 mhz r 45 % reverse recovery time i f = i r = 10 ma, i r = 1 ma t rr 8ns i f = 10 ma, v r = 6 v, i r = 0.1 x i r , r l = 100 t rr 4ns figure 1. forward voltage vs. junction temperature figure 2. forward current vs. forward voltage 0 0.2 0.4 0.6 0. 8 1.2 v - for w ard v oltage ( v ) f t j - j u nction temperat u re (c) 94 9169 1.0 i f = 100 ma 10 ma 1m a 0.1 ma - 30 30 60 90 120 0 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9171 scattering limit t = 25 c j 1 n 444 8 figure 3. reverse current vs. reverse voltage 1 10 100 1000 i r - re v erse c u rrent (na) v r - re v erse v oltage ( v ) 10 1 100 94 909 8 t j = 25 c scattering limit
1n4448 document number 81858 rev. 1.1, 17-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): do-35 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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